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SI1050X-T1-GE3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI1050X-T1-GE3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 73896 S-80641-Rev. B, 24-Mar-08 www.vishay.com 3 Vishay Siliconix Si1050X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Qg - Gate Charge 0 1 2 3 4 5 6 0.0 0.6 1.2 1.8 2.4 VDS - Drain-to-Source Voltage (V) V = 5 thru 2 V V = 1.5 V V = 1.0 V GS GS GS 0.03 0.06 0.09 0.12 0.15 0123456 VGS = 4.5 V ID - Drain Current (A) VGS = 1.5 V VGS = 1.8 V VGS = 2.5 V 0 1 2 3 4 5 0246 8 10 ID = 1.34 A Qg - Total Gate Charge (nC) VGS = 6.4 V VDS = 4 V Transfer Characteristics curves vs. Temp. Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.4 0.8 1.2 1.6 2.0 TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) TC = 25 °C Crss 0 200 400 600 800 1000 01234 567 8 Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) VGS = 2.5 V, ID = 1.30 A VGS = 1.5 V, ID = 0.76 A VGS = 4.5 V, ID = 1.34 A VGS = 1.8 V, ID = 1.23 A |
类似零件编号 - SI1050X-T1-GE3 |
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类似说明 - SI1050X-T1-GE3 |
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