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SI1034X 数据表(PDF) 2 Page - Vishay Siliconix |
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SI1034X 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 71427 S-80643-Rev. B, 24-Mar-08 Vishay Siliconix Si1034X Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.40 1.2 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 2.8 V ± 0.5 ± 1.0 µA VDS = 0 V, VGS = ± 4.5 V ± 1.0 ± 3.0 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V 1 500 nA VDS = 16 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = 5 V, VGS = 4.5 V 250 mA Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 200 mA 5 Ω VGS = 2.5 V, ID = 175 mA 7 VGS = 1.8 V, ID = 150 mA 9 VDS = 1.5 V, ID = 40 mA 10 Forward Transconductancea gfs VDS = 10 V, ID = 200 mA 0.5 S Diode Forward Voltagea VSD IS = 150 mA, VGS = 0 V 1.2 V Dynamicb Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 150 mA 750 pC Gate-Source Charge Qgs 75 Gate-Drain Charge Qgd 225 Turn-On Delay Time td(on) VDD = 10 V, RL = 47 Ω ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω 50 ns Rise Time tr 25 Turn-Off Delay Time td(off) 50 Fall Time tf 25 Output Characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0123456 VDS - Drain-to-Source Voltage (V) VGS = 5 thru 1.8 V 1 V Transfer Characteristics 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) TJ = - 55 °C 125 °C 25 °C |
类似零件编号 - SI1034X |
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类似说明 - SI1034X |
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