SI1032R datasheet(2/5 Pages) VISHAY

部件名	SI1032R

功能描述	N-Channel 1.5-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 71172

S-81543-Rev. E, 07-Jul-08

Vishay Siliconix

Si1032R/X

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

SPECIFICATIONS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.40

0.7

1.2

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 2.8 V

± 0.5

± 1.0

µA

VDS = 0 V, VGS = ± 4.5 V

± 1.0

± 3.0

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

1

VDS = 20 V, VGS = 0 V, TJ = 55 °C

10

On-State Drain Currenta

ID(on)

VDS = 5 V, VGS = 4.5 V

250

mA

Drain-Source On-State Resistancea

RDS(on)

VGS = 4.5 V, ID = 200 mA

5

Ω

VGS = 2.5 V, ID = 175 mA

7

VGS = 1.8 V, ID = 150 mA

9

VGS = 1.5 V, ID = 40 mA

10

Forward Transconductancea

gfs

VDS = 10 V, ID = 200 mA

0.5

S

Diode Forward Voltagea

VSD

IS = 150 mA, VGS = 0 V

1.2

V

Dynamicb

Total Gate Charge

Qg

VDS = 10 V, VGS = 4.5 V, ID = 250 mA

750

pC

Gate-Source Charge

Qgs

75

Gate-Drain Charge

Qgd

225

Turn-On Delay Time

td(on)

VDD = 10 V, RL = 47 Ω

ID ≅ 200 mA, VGEN = 4.5 V, RG = 10 Ω

50

ns

Rise Time

tr

25

Turn-Off Delay Time

td(off)

50

Fall Time

tf

25

Output Characteristics

0.0

0.1

0.2

0.3

0.4

0.5

0123456

VDS - Drain-to-Source Voltage (V)

VGS = 5 thru 1.8 V

1 V

Transfer Characteristics

0

100

200

300

400

500

600

0.0

0.5

1.0

1.5

2.0

2.5

VGS - Gate-to-Source Voltage (V)

TJ = - 55 °C

125 °C

25 °C

类似零件编号 - SI1032R

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1032R	53Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. C, 29-Mar-04
	SI1032R	199Kb / 9P	N-Channel 1.5 V (G-S) MOSFET Rev. F, 08-Nov-10
	SI1032R	135Kb / 7P	N-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
	SI1032R-T1	53Kb / 4P	N-Channel 20-V (D-S) MOSFET Rev. C, 29-Mar-04
	SI1032R-T1-GE3	199Kb / 9P	N-Channel 1.5 V (G-S) MOSFET Rev. F, 08-Nov-10

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类似说明 - SI1032R

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1032R	199Kb / 9P	N-Channel 1.5 V (G-S) MOSFET Rev. F, 08-Nov-10
	SI1032R	135Kb / 7P	N-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
	SI8404DB	260Kb / 8P	N-Channel 1.5-V (G-S) MOSFET Rev. C, 08-Sep-08
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	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI5499DC	143Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. B, 04-Feb-08
	SI3499DV	91Kb / 6P	P-Channel 1.5-V (G-S) MOSFET Rev. A, 18-Oct-04
	SI8435DB	120Kb / 8P	P-Channel 1.5-V (G-S) MOSFET Rev. D, 08-Sep-08
	SI3499DV	235Kb / 10P	P-Channel 1.5 V (G-S) MOSFET 01-Jan-2022
	SI3495DV	98Kb / 6P	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET Rev. B, 02-Jul-07

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SI1032R 数据表(PDF) 2 Page - Vishay Siliconix

SI1032R 数据表(HTML) 2 Page - Vishay Siliconix

类似零件编号 - SI1032R

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SI1032R 数据表(PDF) 2 Page - Vishay Siliconix

SI1032R 数据表(HTML) 2 Page - Vishay Siliconix

类似零件编号 - SI1032R

类似说明 - SI1032R

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