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SI1012R-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI1012R-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 6 page www.vishay.com 4 Document Number: 71166 S-81543-Rev. C, 07-Jul-08 Vishay Siliconix Si1012R/X TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage Variance vs. Temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 1 VSD - Source-to-Drain Voltage (V) TJ = 125 °C TJ = 25 °C 10 100 TJ = - 55 °C - 0.3 - 0.2 - 0.1 0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 ID = 0.25 mA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage IGSS vs. Temperature 0 1 2 3 4 5 0123456 ID = 350 mA VGS - Gate-to-Source Voltage (V) ID = 200 mA 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) VGS = 4.5 V BVGSS vs. Temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 TJ - Temperature (°C) |
类似零件编号 - SI1012R-T1-E3 |
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类似说明 - SI1012R-T1-E3 |
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