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IRFP27N60K 数据表(PDF) 7 Page - Vishay Siliconix |
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IRFP27N60K 数据表(HTML) 7 Page - Vishay Siliconix |
7 / 8 page Document Number: 91219 www.vishay.com S-Pending-Rev. B, 12-Jun-08 7 IRFP27N60K, SiHFP27N60K Vishay Siliconix Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91219. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5% Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor curent D = P.W. Period + - + + + - - - * VGS = 5 V for logic level devices Peak Diode Recovery dV/dt Test Circuit RG VDD • dV/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer |
类似零件编号 - IRFP27N60K |
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类似说明 - IRFP27N60K |
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