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ECH8608 数据表(PDF) 2 Page - Sanyo Semicon Device |
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ECH8608 数据表(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page ECH8608 No.8179-2/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 19 ns Rise Time tr See specified Test Circuit. 134 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 90 ns Fall Time tf See specified Test Circuit. 94 ns Total Gate Charge Qg VDS=10V, VGS=10V, ID=6A 23 nC Gate-to-Source Charge Qgs VDS=10V, VGS=10V, ID=6A 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=10V, ID=6A 3.6 nC Diode Forward Voltage VSD IS=6A, VGS=0 0.84 1.2 V [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS ID=--1mA, VGS=0 --20 V Zero-Gate Voltage Drain Current IDSS VDS=--20V, VGS=0 --1 µA Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0 ±10 µA Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --0.4 --1.3 V Forward Transfer Admittance yfs VDS=--10V, ID=--2A 4.9 7 S RDS(on)1 ID=--2A, VGS=--4.5V 37 54 m Ω Static Drain-to-Source On-State Resistance RDS(on)2 ID=--1A, VGS=--2.5V 58 87 m Ω Input Capacitance Ciss VDS=--10V, f=1MHz 800 pF Output Capacitance Coss VDS=--10V, f=1MHz 210 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 160 pF Turn-ON Delay Time td(on) See specified Test Circuit. 17 ns Rise Time tr See specified Test Circuit. 197 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 88 ns Fall Time tf See specified Test Circuit. 128 ns Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 21 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 3.2 nC Diode Forward Voltage VSD IS=--4A, VGS=0 --0.82 --1.2 V Package Dimensions Electrical Connection unit : mm 2206B 876 5 123 4 Top view 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 85 0.15 0.65 2.9 0.3 |
类似零件编号 - ECH8608 |
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类似说明 - ECH8608 |
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