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IRF830AS 数据表(PDF) 2 Page - Vishay Siliconix

部件名 IRF830AS
功能描述  Power MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

IRF830AS 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 91062
2
S-81352-Rev. A, 16-Jun-08
IRF830AS, IRF830AL, SiHF830AS, SiHF830AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses SiHF830A data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
-1.7
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mAd
-0.60
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.5
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 3.0 Ab
--
1.4
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 3.0 Ad
2.8
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5d
-
620
-
pF
Output Capacitance
Coss
-93
-
Reverse Transfer Capacitance
Crss
-4.3
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
-
886
-
VDS = 400 V, f = 1.0 MHz
-
27
-
Effective Output Capacitance
Coss eff.
VDS = 0 V to 400 Vc, d
-39
-
Total Gate Charge
Qg
VGS = 10 V
ID = 5.0 A, VDS = 400 V,
see fig. 6 and 13b, d
--
24
nC
Gate-Source Charge
Qgs
--
6.3
Gate-Drain Charge
Qgd
--
11
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 5.0 A,
RG = 14 Ω, RD = 49 Ω, see fig. 10b, d
-10
-
ns
Rise Time
tr
-21
-
Turn-Off Delay Time
td(off)
-21
-
Fall Time
tf
-15
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
5.0
A
Pulsed Diode Forward Currenta
ISM
--
20
Body Diode Voltage
VSD
TJ = 25 °C, IS = 5.0 A, VGS = 0 Vb
--
1.5
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 5.0 A, dI/dt = 100 A/µsb, d
-
430
650
ns
Body Diode Reverse Recovery Charge
Qrr
-2.0
3.0
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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