数据搜索系统,热门电子元器件搜索 |
|
IRF740ASTRR 数据表(PDF) 1 Page - Vishay Siliconix |
|
IRF740ASTRR 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91052 www.vishay.com S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF740AS, IRF740AL, SiHF740AS, SiHF740AL Vishay Siliconix FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss specified (AN 1001) • Lead (Pb)-free Available APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High speed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr. Reset • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 12.6 mH, RG = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 330 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. Uses IRF740A/SiHF740A data and test conditions. PRODUCT SUMMARY VDS (V) 400 RDS(on) (Ω)VGS = 10 V 0.55 Qg (Max.) (nC) 36 Qgs (nC) 9.9 Qgd (nC) 16 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF740ASPbF IRF740ASTRLPbFa IRF740ASTRRPbFa IRF740ALPbF SiHF740AS-E3 SiHF740ASTL-E3a SiHF740ASTR-E3a SiHF740AL-E3 SnPb IRF740AS IRF740ASTRLa IRF740ASTRRa IRF740AL SiHF740AS SiHF740ASTLa SiHF740ASTRa SiHF740AL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ± 30 Continuous Drain Currente VGS at 10 V TC = 25 °C ID 10 A TC = 100 °C 6.3 Pulsed Drain Currenta, e IDM 40 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb, e EAS 630 mJ Avalanche Currenta IAR 10 A Repetiitive Avalanche Energya EAR 12.5 mJ Maximum Power Dissipation TA = 25 °C PD 3.1 W TC = 25 °C 125 Peak Diode Recovery dV/dtc, e dV/dt 5.9 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
类似零件编号 - IRF740ASTRR |
|
类似说明 - IRF740ASTRR |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |