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IRF644NSTRR 数据表(PDF) 1 Page - Vishay Siliconix

部件名 IRF644NSTRR
功能描述  Power MOSFET
Download  8 Pages
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

IRF644NSTRR 数据表(HTML) 1 Page - Vishay Siliconix

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Document Number: 91038
www.vishay.com
S-Pending-Rev. A, 19-Jun-08
WORK-IN-PROGRESS
1
Power MOSFET
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
Note
a. See device orientation.
PRODUCT SUMMARY
VDS (V)
250 V
RDS(on) (Ω)VGS = 10 V
0.240
Qg (Max.) (nC)
54
Qgs (nC)
9.2
Qgd (nC)
26
Configuration
Single
N-Channel MOSFET
G
D
S
D2PAK (TO-263)
G
D
S
TO-220
G
D
S
I2PAK (TO-262)
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
D2PAK (TO-263)
D2PAK (TO-263)
I2PAK (TO-262)
Lead (Pb)-free
IRF644NPbF
IRF644NSPbF
IRF644NSTRLPbFa
IRF644NSTRRPbFa
IRF644NLPbF
SiHF644N-E3
SiHF644NS-E3
SiHF644NSTL-E3a
SiHF644NSTR-E3a
SiHF644NL-E3
SnPb
IRF644N
IRF644NS
IRF644NSTRLa
IRF644NSTRRa
IRF644NL
SiHF644N
SiHF644NS
SiHF644NSTLa
SiHF644NSTRa
SiHF644NL
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
14
A
TC = 100 °C
9.9
Pulsed Drain Currenta
IDM
56
Linear Derating Factor
1.0
W/°C
Single Pulse Avalanche Energyb
EAS
180e
mJ
Avalanche Current
IAR
8.4
A
Repetitive Avalanche Energy
EAR
15
mJ
Maximum Power Dissipation
TC = 25 °C
PD
150
W
Peak Diode Recovery dV/dtc
dV/dt
7.9
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply


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