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IRF644NSTRR 数据表(PDF) 1 Page - Vishay Siliconix |
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IRF644NSTRR 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91038 www.vishay.com S-Pending-Rev. A, 19-Jun-08 WORK-IN-PROGRESS 1 Power MOSFET IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix FEATURES • Advanced Process Technology • Dynamic dV/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Note a. See device orientation. PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω)VGS = 10 V 0.240 Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single N-Channel MOSFET G D S D2PAK (TO-263) G D S TO-220 G D S I2PAK (TO-262) Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 D2PAK (TO-263) D2PAK (TO-263) D2PAK (TO-263) I2PAK (TO-262) Lead (Pb)-free IRF644NPbF IRF644NSPbF IRF644NSTRLPbFa IRF644NSTRRPbFa IRF644NLPbF SiHF644N-E3 SiHF644NS-E3 SiHF644NSTL-E3a SiHF644NSTR-E3a SiHF644NL-E3 SnPb IRF644N IRF644NS IRF644NSTRLa IRF644NSTRRa IRF644NL SiHF644N SiHF644NS SiHF644NSTLa SiHF644NSTRa SiHF644NL ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Gate-Source Voltage VGS ± 20 V Continuous Drain Current VGS at 10 V TC = 25 °C ID 14 A TC = 100 °C 9.9 Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.0 W/°C Single Pulse Avalanche Energyb EAS 180e mJ Avalanche Current IAR 8.4 A Repetitive Avalanche Energy EAR 15 mJ Maximum Power Dissipation TC = 25 °C PD 150 W Peak Diode Recovery dV/dtc dV/dt 7.9 V/ns * Pb containing terminations are not RoHS compliant, exemptions may apply |
类似零件编号 - IRF644NSTRR |
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类似说明 - IRF644NSTRR |
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