Document Number: 91091

www.vishay.com

S-Pending-Rev. A, 03-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L

Vishay Siliconix

FEATURES

• Advanced Process Technology

• Surface Mount (IRF9Z24S/SiHF9Z24S)

• Low-Profile Through-Hole (IRF9Z24L/SiHF9Z24L)

• 175 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

accommodating die size up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

for high current applications because of its low internal

connection resistance and can dissipate up to 2.0 W in a

typical surface mount application.

The through-hole version (IR9Z24L/SiH9Z24L) is available

for low-profile applications.

Note

a. See device orientation.

PRODUCT SUMMARY

- 60

0.28

19

5.4

11

Configuration

Single

S

G

D

P-Channel MOSFET

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

Lead (Pb)-free

IRF9Z24SPbF

IRF9Z24LPbF

SiHF9Z24S-E3

SiHF9Z24L-E3

SnPb

IRF9Z24S

IRF9Z24L

SiHF9Z24S

SiHF9Z24L

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

- 60

V

Gate-Source Voltage

± 20

- 11

A

- 7.7

- 44

Linear Derating Factor

0.40

W/°C

240

mJ

- 11

A

6.0

mJ

* Pb containing terminations are not RoHS compliant, exemptions may apply