2SK2628FG datasheet(2/6 Pages) SANYO

部件名	2SK2628FG

功能描述	N-Channel Silicon MOSFET General-Purpose Switching Device Applications

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制造商	SANYO [Sanyo Semicon Device]

网页	https://www.sanyo-av.com/us/

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2 / 6 page

2SK2628FG

No. A1322-2/6

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=10mA, VGS=0V

600

V

Zero-Gate Voltage Drain Current

IDSS

VDS=480V, VGS=0V

1.0

mA

Gate-to-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

nA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

3.5

5.5

V

Forward Transfer Admittance

| yfs |

VDS=10V, ID=4A

2.0

4.0

S

Static Drain-to-Source On-State Resistance

RDS(on)

ID=2A, VGS=15V

0.9

1.1

Ω

Input Capacitance

Ciss

VDS=20V, f=1MHz

1050

pF

Output Capacitance

Coss

VDS=20V, f=1MHz

320

pF

Reverse Transfer Capacitance

Crss

VDS=20V, f=1MHz

180

pF

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

23

ns

Rise Time

tr

See speciﬁed Test Circuit.

35

ns

Turn-OFF Delay Time

td(off)

See speciﬁed Test Circuit.

90

ns

Fall Time

tf

See speciﬁed Test Circuit.

35

ns

Total Gate Charge

Qg

VDS=200V, VGS=10V, ID=6A

30

nC

Diode Forward Voltage

VSD

IS=6A, VGS=0V

0.85

1.2

V

Package Dimensions

unit : mm (typ)

7529-001

Switching Time Test Circuit

Avalanche Resistance Test Circuit

PW=1μs

D.C.≤0.5%

P.G

RGS

50Ω

G

S

ID=4A

RL=50Ω

VDD=200V

VGS=15V

VOUT

2SK2628FG

D

50Ω

≥50Ω

RG

VDD

L

15V

0V

2SK2628FG

1 : Gate

2 : Drain

3 : Source

SANYO : TO-220F-3SG

10.16

0.8

1.47 MAX

4.7

2.54

2.76

12

3

0.5

2.54

3.18

(0.84)

DETAIL-A

A

EMC

FRAME

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链接网址

2SK2628FG 数据表(PDF) 2 Page - Sanyo Semicon Device

2SK2628FG 数据表(HTML) 2 Page - Sanyo Semicon Device

类似零件编号 - 2SK2628FG

类似说明 - 2SK2628FG

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数据表 下载

链接网址

数据表下载