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TDA2822M 数据表(PDF) 3 Page - STMicroelectronics |
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TDA2822M 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 11 page  ELECTRICAL CHARACTERISTICS (VS = 6V, Tamb = 25 oC, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit STEREO (test circuit of Figure 1) Vs Supply Voltage 1.8 15 V Vo Quiescent Output Voltage Vs = 3V 2.7 1.2 V V Id Quiescent Drain Current 6 9 mA Ib Input Bias Current 100 nA Po Output Power (each channel) (f = 1kHz, d = 10%) RL = 32 Ω VS = 9V VS = 6V VS = 4.5V VS = 3V VS = 2V RL = 16 Ω VS = 6V RL = 8 Ω VS = 9V VS = 6V RL = 4 Ω VS = 6V VS = 4.5V VS = 3V 90 15 170 300 450 300 120 60 20 5 220 1000 380 650 320 110 mW d Distortion (f = 1kHz) RL = 32 Ω Po = 40mW RL = 16 Ω Po = 75mW RL = 8 Ω Po = 150mW 0.2 0.2 0.2 % % % Gv Closed Loop Voltage Gain f = 1kHz 36 39 41 dB ∆Gv Channel Balance ± 1 dB Ri Input Resistance f = 1kHz 100 k Ω eN Total Input Noise Rs = 10k Ω B = Curve A B = 22Hz to 22kHz 2 2.5 µV µV SVR Supply Voltage Rejection f = 100Hz, C1 = C2 = 100 µF 24 30 dB Cs Channel Separation f = 1kHz 50 dB BRIDGE (test circuit of Figure 2) Vs Supply Voltage 1.8 15 V Id Quiescent Drain Current RL = ∞ 69 mA Vos Output Offset Voltage (between the outputs) RL = 8 Ω± 50 mV Ib Input Bias Current 100 nA Po Output Power (f = 1kHz, d = 10%) RL = 32 Ω VS = 9V VS = 6V VS = 4.5V VS = 3V VS = 2V RL = 16 Ω VS = 9V VS = 6V VS = 3V RL = 8 Ω VS = 6V VS = 4.5V VS = 3V RL = 4 Ω VS = 4.5V VS = 3V VS = 2V 320 50 900 200 1000 400 200 65 8 2000 800 120 1350 700 220 1000 350 80 mW d Distortion Po = 0.5W, RL = 8 Ω, f = 1kHz 0.2 % Gv Closed Loop Voltage Gain f = 1kHz 39 dB Ri Input Resistance f = 1kHz 100 k Ω eN Total Input Noise Rs = 10k Ω B = Curve A B = 22Hz to 22kHz 2.5 3 µV µV SVR Supply Voltage Rejection f = 100Hz 40 dB TDA2822M 3/11 |
类似零件编号 - TDA2822M |
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类似说明 - TDA2822M |
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