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STP130NH02L 数据表(PDF) 4 Page - STMicroelectronics

部件名 STP130NH02L
功能描述  N-channel 24V - 0.0034廓 - 120A - TO-220 STripFET??Power MOSFET for DC-DC conversion
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP130NH02L 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STP130NH02L
4/14
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 25mA
VGS= 0
24
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,
TC=125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
1V
RDS(on)
Static drain-source on
resistance
VGS = 10V , ID = 45A
VGS = 5V, ID = 22.5A
0.0034
0.005
0.0044
0.008
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance VDS = 10V, ID = 45A
55
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 15V, f = 1MHz,
VGS = 0
4450
1126
141
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Off voltage rise time
Fall time
VDD = 10V, ID = 45A,
RG = 4.7Ω, VGS = 10V
(see Figure 13)
14
224
69
40
ns
ns
ns
ns
Rg
Gate input resistance
f = 1MHz gate DC bias=0
test signal level=20mV
open drain
1.6
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=10V, ID = 90A
VGS =10V
(see Figure 14)
69
13
9
93
nC
nC
nC
Qoss
(2)
2.
Qoss = Coss*
V
IN, Coss = Cgd + Cds. See power losses calculation
Output charge
VDS = 16V, VGS = 0
27
ns
Qgls
(3)
3.
Gate charge for synchronous operation.
Third-quadrant gate
charge
VDS < 0, VGS= 10V
64
ns


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