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STP90N4F3 数据表(PDF) 4 Page - STMicroelectronics |
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STP90N4F3 数据表(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STD90N4F3 - STI90N4F3 - STP90N4F3 - STU90N4F3 4/16 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 40 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 24 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A 5.4 6.5 m Ω Table 5. Dynamic Symbol Parameter Test conditions Min Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =25 V, ID=40 A 100 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 2200 580 40 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=20 V, ID = 80 A VGS =10 V (see Figure 14) 40 11 8 54 nC nC nC |
类似零件编号 - STP90N4F3 |
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类似说明 - STP90N4F3 |
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