STX83003 datasheet(2/7 Pages) STMICROELECTRONICS

部件名	STX83003

功能描述	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

83.3

200

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 700V

Tj = 125

oC

1

5

mA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10 mA

12

18

V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

IC = 0.35 A

IB = 50 mA

0.5

1

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 0.1 A

1

V

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.35 A

VCE = 5 V

IC = 1 A

VCE = 5 V

10

16

4

25

32

tr

ts

tf

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

IC = 0.35 A

VCC = 125 V

IB1 = 70 mA

IB2 = -70 mA

Tp

≥ 25 µs

(see figure 2)

1.5

100

2.2

0.2

2.9

ns

µs

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 0.5 A

IB1 = 0.1 A

VBE(off) = -5 V

L = 10 mH

Vclamp = 300 V

(see figure 1)

450

90

ns

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %.

STX83003

2/7

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STX83003 数据表(PDF) 2 Page - STMicroelectronics

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