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1N2131A 数据表(PDF) 3 Page - Vishay Siliconix |
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1N2131A 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Document Number: 93492 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 24-Jun-08 3 1N1183, 1N3765, 1N1183A, 1N2128A Series Power Silicon Rectifier Diodes, 35 A/40 A/60 A Vishay High Power Products Note (1) JEDEC registered values Fig. 1 - Maximum Allowable Case Temperature vs. Average Forward Current, 1N1183 and 1N3765 Series Fig. 2 - Typical Low Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Fig. 3 - Typical High Level Forward Power Loss vs. Average Forward Current (Sinusoidal Current Waveform), 1N1183 and 1N3765 Series Fig. 4 - Typical Forward Voltage vs. Forward Current, 1N1183 and 1N3765 Series THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1N1183 1N3765 1N1183A 1N2128A UNITS Maximum operating case temperature range TC - 65 to 190 (1) - 65 to 200 °C Maximum storage temperature range TStg - 65 to 175 (1) - 65 to 200 Maximum internal thermal resistance, junction to case RthJC DC operation 1.00 (1) 1.1 (1) 0.65 (1) °C/W Thermal resistance, case to sink RthCS Mounting surface, smooth, flat and greased 0.25 Mounting torque minimum Non-lubricated threads 2.3 (20) N · m (lbf · in) maximum 3.4 (30) Approximate weight 17 g 0.6 oz. Case style JEDEC DO-203AB (DO-5) |
类似零件编号 - 1N2131A |
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类似说明 - 1N2131A |
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