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2SD1113K 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SD1113K 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 6 page 2SD1113(K) 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 300 — 500 V I C = 0.1 mA, IE = 0 Collector to emitter sustain voltage V CEO(sus) 300 — — V I C = 3 A, PW = 50 µs, f = 50 Hz, L = 10 mH Emitter to base breakdown voltage V (BR)EBO 7— — VI E = 50 mA, IC = 0 Collector cutoff current I CEO — — 100 µAV CE = 300 V, RBE = ∞ DC current transfer ratio h FE 500 — — V CE = 2 V, IC = 4 A* 1 Collector to emitter saturation voltage V CE(sat) — — 1.5 V I C = 4 A, IB = 40 mA* 1 Base to emitter saturation voltage V BE(sat) — — 2.0 V I C = 4 A, IB = 40 mA* 1 Turn on time t on — 2.0 — µsI C = 4 A, IB1 = –IB2 = 40 mA Turn off time t off —23— µsI C = 4 A, IB1 = –IB2 = 40 mA Note: 1. Pulse test. 0 50 100 150 Case temperature TC (°C) Maximum Collector Dissipation Curve 20 40 60 0.005 0.01 0.1 1.0 50 10 Collector to emitter voltage VCE (V) 0.5 1.0 2 5 10 20 50 100200 500 Area of Safe Operation iC (peak) IC (max) Ta = 25 °C 1 shot pulse |
类似零件编号 - 2SD1113K |
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类似说明 - 2SD1113K |
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