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2SK3209 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SK3209 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 4 page 2SK3209 Rev.3.00 Sep 07, 2005 page 2 of 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 150 V Gate to source voltage VGSS ±20 V Drain current ID 25 A Drain peak current ID(pulse)* 1 100 A Body-drain diode reverse drain current IDR 25 A Avalanche current IAP* 3 25 A Avalanche energy EAR* 3 46 mJ Channel dissipation Pch* 2 35 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 150 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 40 45 m Ω ID = 15 A, VGS = 10 V* 4 Static drain to source on state resistance RDS(on) — 45 63 m Ω ID = 15 A, VGS = 4 V* 4 Forward transfer admittance |yfs| 18 30 — S ID = 15 A, VDS = 10 V* 4 Input capacitance Ciss — 2600 — pF Output capacitance Coss — 820 — pF Reverse transfer capacitance Crss — 350 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time td(on) — 25 — ns Rise time tr — 180 — ns Turn-off delay time td(off) — 600 — ns Fall time tf — 280 — ns ID = 15 A, VGS = 10 V, RL = 2 Ω Body–drain diode forward voltage VDF — 0.90 — V IF = 25 A, VGS = 0 Body–drain diode reverse recovery time trr — 100 — ns IF = 25 A, VGS = 0 diF/ dt = 50 A/ µs Note: 4. Pulse test |
类似零件编号 - 2SK3209 |
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类似说明 - 2SK3209 |
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