2SJ451 datasheet(1/7 Pages) RENESAS

部件名	2SJ451

功能描述	Silicon P Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

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REJ03G864-0400 Rev.4.00 Sep 07, 2007

Page 1 of 6

2SJ451

Silicon P Channel MOS FET

REJ03G0864-0400

Rev.4.00

Sep 07, 2007

Description

Low frequency power switching

Features

• Low on-resistance.

• Low drive power

• 2.5 V gate drive device.

• Small package (MPAK).

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

1. Source

2. Gate

3. Drain

D

S

G

1

2

3

Note: Marking is “ZK–”.

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–20

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

–0.2

A

Drain peak current

ID (pulse)

Note 1

–0.4

A

Channel dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1%

类似零件编号 - 2SJ451

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SJ451	40Kb / 8P	Silicon P-Channel MOS FET
VBsemi Electronics Co.,...	2SJ451ZK-TL-E	980Kb / 7P	P-Channel 60 V (D-S) MOSFET

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类似说明 - 2SJ451

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Hitachi Semiconductor	2SJ221	48Kb / 8P	Silicon P-Channel MOS FET
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Renesas Technology Corp	2SJ181(L)	109Kb / 7P	Silicon P Channel MOS FET
	2SJ555	109Kb / 10P	Silicon P Channel MOS FET
	2SJ518	102Kb / 9P	Silicon P Channel MOS FET
	2SJ526	110Kb / 10P	Silicon P Channel MOS FET
	2SJ542	107Kb / 10P	Silicon P Channel MOS FET
	2SJ543	107Kb / 10P	Silicon P Channel MOS FET
	2SJ550	95Kb / 9P	Silicon P Channel MOS FET
	2SJ551	95Kb / 9P	Silicon P Channel MOS FET