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STB25NM60ND 数据表(PDF) 5 Page - STMicroelectronics |
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STB25NM60ND 数据表(HTML) 5 Page - STMicroelectronics |
5 / 18 page STP/F25NM60ND - STB25NM60ND - STI25NM60ND - STW25NM60ND Electrical characteristics 5/18 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) 21 84 A A VSD (2) 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward on voltage ISD = 21 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A, VDD = 60 V di/dt=100 A/µs (see Figure 20) 160 1 15 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 21 A,VDD = 60 V di/dt=100 A/µs, TJ = 150 °C (see Figure 20) 230 2 19 ns µC A |
类似零件编号 - STB25NM60ND |
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类似说明 - STB25NM60ND |
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