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2SD1418DATR-E 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SD1418DATR-E 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SD1418 Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 120 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 80 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 10 µA VCB = 100 V, IE = 0 DC current transfer ratio hFE1* 1 60 — 320 VEB = 5 V, IC = 150 mA* 2 hFE2 30 — — VCE = 5 V, IC = 500 mA* 2 Collector to emitter saturation voltage VCE(sat) — — 1 V IC = 500 mA, IB = 50 mA* 2 Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 150 mA* 2 Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 150 mA* 2 Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz Notes: 1. The 2SD1418 is grouped by hFE1 as follows. 2. Pulse test Mark DA DB DC hFE1 60 to 120 100 to 200 160 to 320 |
类似零件编号 - 2SD1418DATR-E |
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类似说明 - 2SD1418DATR-E |
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