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2SK2980ZZ-TR-E 数据表(PDF) 2 Page - Renesas Technology Corp

部件名 2SK2980ZZ-TR-E
功能描述  Silicon N Channel MOS FET High Speed Power Switching
Download  7 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SK2980ZZ-TR-E 数据表(HTML) 2 Page - Renesas Technology Corp

  2SK2980ZZ-TR-E Datasheet HTML 1Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 2Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 3Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 4Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 5Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 6Page - Renesas Technology Corp 2SK2980ZZ-TR-E Datasheet HTML 7Page - Renesas Technology Corp  
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2SK2980
Rev.4.00 Sep 07, 2005 page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
+12
V
Gate to source voltage
VGSS
–10
V
Drain current
ID
1.0
A
Drain peak current
ID(pulse)
Note1
4
A
Channel dissipation
Pch
Note2
0.8
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10µs, duty cycle ≤ 1 %
2. Value at when using alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
30
V
ID = 100
µA, VGS = 0
+12
V
IG = +100
µA, VDS = 0
Gate to source breakdown voltage
V(BR)GSS
–10
V
IG = –100
µA, VDS = 0
Zero gate voltage drain current
IDSS
1.0
µA
VDS = 30 V, VGS = 0
Gate to source leak current
IGSS
±5.0
µA
VGS =
±8 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
0.5
1.5
V
ID = 10
µA, VDS = 5 V
Static drain to source on state
resistance
RDS(on)
0.2
0.28
ID = 500 mA, VGS = 4 V
Note3
Static drain to source on state
resistance
RDS(on)
0.3
0.5
ID = 500 mA, VGS = 2.5 V
Note3
Forward transfer admittance
|yfs|
1.2
2.0
S
ID = 500 mA, VDS = 10 V
Note3
Input capacitance
Ciss
155
pF
Output capacitance
Coss
75
pF
Reverse transfer capacitance
Crss
35
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
12
ns
Rise time
tr
30
ns
Turn-off delay time
td(off)
35
ns
Fall time
tf
30
ns
VGS = 4 V, ID = 500 mA,
RL = 20
Note:
3. Pulse test


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