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2SK2980 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SK2980 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SK2980 Rev.4.00 Sep 07, 2005 page 3 of 6 Main Characteristics Power vs. Temperature Derating Ambient Temperature Ta ( °C) Maximum Safe Operation Area Drain to Source Voltage VDS (V) Typical Output Characteristics Drain to Source Voltage VDS (V) Typical Transfer Characteristics Gate to Source Voltage VGS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.1 1 10 1.0 0.8 0.6 0.4 0.2 0 2 468 10 1.0 0.8 0.6 0.4 0.2 0 12 34 5 1.6 1.2 0.8 0.4 0 50 100 150 200 4 V 3 1 0.3 0.1 0.03 0.01 0.3 3 30 10 30 100 100 Ta = 25 °C 10 µs 100 µs 1 ms PW = 10 ms (1 shot) 2.5 V VGS = 1.5 V 2 V 1.8 V Tc = –25 °C 75 °C 25 °C VDS = 10 V Pulse Test Operation in this area is limited by RDS(on) Test condition : When using alumina ceramic board (12.5 x 20 x 0.7 mm) DC Operation Pulse Test 0.5 0.4 0.3 0.2 0.1 0 24 6 810 0.5 A 0.2 A ID = 1 A 2 1 0.2 0.5 0.1 0.05 0.1 0.2 0.5 1 2 5 VGS = 2.5 V 4 V Pulse Test Pulse Test |
类似零件编号 - 2SK2980 |
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类似说明 - 2SK2980 |
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