2SK2529-E datasheet(4/8 Pages) RENESAS

部件名	2SK2529-E

功能描述	Silicon N Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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4 / 8 page

2SK2529

Rev.8.00 Sep 07, 2005 page 4 of 7

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

0.04

0.032

0.024

0.016

0.008

–40

0

40

80

120

160

0

Pulse Test

ID = 50 A

VGS = 4 V

10 V

10, 20 A

10, 20, 50 A

0.1

0.3

1

3

10

30

100

VDS = 10 V

Pulse Test

500

100

200

20

50

10

2

5

1

0.5

25

°C

Tc = –25

°C

75

°C

0.1

0.3

1

3

10

30

100

5000

2000

1000

200

500

100

20

50

10

5

di / dt = 50 A /

µs

VGS = 0, Ta = 25°C

010

20

30

40

50

10000

2000

5000

1000

100

200

500

VGS = 0

f = 1 MHz

Ciss

Coss

Crss

100

80

60

40

20

0

20

16

12

8

4

40

80

120

160

200

0

VDD = 10 V

25 V

50 V

ID = 50 A

VGS

VDS

VDD = 50 V

25 V

10 V

5000

2000

1000

200

500

100

20

10

50

5

0.1

0.3

1

3

10

30

100

VGS = 10 V, VDS = 30 V

PW = 5

µs, duty < 1 %

tf

tr

td(on)

td(off)

类似零件编号 - 2SK2529-E

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SK2529	51Kb / 10P	Silicon N-Channel MOS FET
VBsemi Electronics Co.,...	2SK2529	986Kb / 7P	N-Channel 60 V (D-S) MOSFET
Inchange Semiconductor ...	2SK2529	295Kb / 2P	isc N-Channel MOSFET Transistor

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