2SK2329 datasheet(4/8 Pages) RENESAS

部件名	2SK2329

功能描述	Silicon N Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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4 / 8 page

2SK2329(L), 2SK2329(S)

Rev.2.00 Sep 07, 2005 page 4 of 7

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance

vs. Drain Current

Reverse Drain Current IDR (A)

Body to Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Dynamic Input Characteristics

Gate Charge Qg (nc)

Drain Current ID (A)

Switching Characteristics

0.10

0.08

0.06

0.04

0.02

-40

0

40

80

120

160

0

Pulse Test

ID = 2 A, 5 A, 10 A

VGS = 4 V

2.5 V

2 A, 5 A, 10 A

0.1

0.3

1

3

10

30

100

50

20

10

2

5

1

0.5

25

°C

Tc = -25

°C

75

°C

VDS = 10 V

Pulse Test

1000

200

500

100

20

50

10

0.2

0.5

1

2

5

10

20

di/dt = 20 A/

µs

VGS = 0, Ta = 25°C

010

20

30

40

50

5000

2000

1000

200

500

100

50

Ciss

Coss

Crss

VGS = 0

f = 1 MHz

100

80

60

40

20

0

20

16

12

8

4

VDD = 10 V

25 V

ID = 10 A

VGS

VDS

VDD = 25 V

10 V

20

40

60

80

100

0

1000

200

500

100

20

50

10

0.2

0.5

1

2

5

10

20

VGS = 4 V, VDD = 10 V

PW = 3

µs, duty < 1 %

tf

tr

td(on)

td(off)

类似零件编号 - 2SK2329

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SK2329	47Kb / 10P	Silicon N-Channel MOS FET
Renesas Technology Corp	2SK2329-E	79Kb / 7P	Silicon N Channel MOS FET
Hitachi Semiconductor	2SK2329L	47Kb / 10P	Silicon N-Channel MOS FET
VBsemi Electronics Co.,...	2SK2329L	960Kb / 8P	N-Channel 30-V (D-S) MOSFET
Inchange Semiconductor ...	2SK2329L	318Kb / 2P	isc N-Channel MOSFET Transistor

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