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2SK1300 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK1300 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1300 Rev.2.00 Sep 07, 2005 page 4 of 6 80 Case Temperature TC (°C) 120 40 0 0.1 0.2 0.3 0.4 0.5 –40 0 160 Static Drain to Source on State Resistance vs. Temperature ID = 10 A Pulse Test VGS = 4 V 10 V 2 A 5 A 2 A 10 A 5 A Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.1 0.2 0.5 1 2 10 Drain Current ID (A) 5 0.5 TC = –25°C VDS = 10 V Pulse Test 25 °C 75 °C 500 200 100 50 20 10 5 0.1 0.2 1 10 Reverse Drain Current IDR (A) 2 0.5 5 Body to Drain Diode Reverse Recovery Time di/dt = 50 A/ µs VGS = 0, Ta = 25°C Pulse Test Typical Capacitance vs. Drain to Source Voltage 10,000 1,000 100 10 010 20 50 Drain to Source Voltage VDS (V) 30 40 VGS = 0 f = 1 MHz Ciss Coss Crss 200 160 120 80 40 0 824 32 Gate Charge Qg (nc) 16 20 16 12 8 4 Dynamic Input Characteristics 40 0 VDS VGS VDD = 25 V 50 V 80 V ID = 10 A VDD = 80 V 50 V 25 V Switching Characteristics 500 200 100 50 10 5 0.2 0.5 2 20 Drain Current ID (A) 5 1 10 20 td(off) td(on) tf tr VGS = 10 V, PW = 2 µs duty < 1 % VDD = . . 30 V |
类似零件编号 - 2SK1300 |
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类似说明 - 2SK1300 |
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