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2SK1166 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK1166 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK1165, 2SK1166 Rev.2.00 Sep 07, 2005 page 4 of 6 1.0 40 160 Case Temperature TC (°C) 0.8 0.2 0 80 120 0 0.4 0.6 Static Drain to Source on State Resistance vs. Temperature 15 A VGS = 10 V Pulse Test 10 A ID = 5 A –40 50 1.0 20 Drain Current ID (A) 20 2 0.5 2 10 0.5 5 10 Forward Transfer Admittance vs. Drain Current –25 °C VDS = 20 V Pulse Test 0.2 1.0 5 TC = 25°C 75 °C 5,000 1.0 20 Reverse Drain Current IDR (A) 2,000 200 0.5 2 10 50 500 1,000 Body to Drain Diode Reverse Recovery Time 0.2 100 5 di/dt = 100 A/ µs, Ta = 25°C VGS = 0 V Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) 100 10 30 40 10 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz 0 Ciss Coss Crss 500 40 100 Gate Charge Qg (nc) Dynamic Input Characteristics 400 100 20 60 80 0 200 300 VDS 100 V 20 16 4 0 8 12 VDD = 100 V 250 V 400 V ID = 12 A 250 V VDD = 400 V VGS 250 Drain Current ID (A) 500 50 1.0 5 20 10 100 200 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 0.5 20 10 Switching Characteristics td (off) tr td (on) tf 5 • • |
类似零件编号 - 2SK1166 |
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类似说明 - 2SK1166 |
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