2SK215 datasheet(2/6 Pages) RENESAS

部件名	2SK215

功能描述	Silicon N Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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2 / 6 page

2SK213, 2SK214, 2SK215, 2SK216

Rev.2.00 Sep 07, 2005 page 2 of 5

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

2SK213

140

2SK214

160

2SK215

180

Drain to source voltage

2SK216

VDSX

200

V

Gate to source voltage

VGSS

±15

V

Drain current

ID

500

mA

Body to drain diode reverse drain current

IDR

500

mA

Pch

1.75

W

Channel dissipation

Pch*

1

30

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note:

1. Value at TC = 25°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

2SK213

140

—

V

2SK214

160

—

V

2SK215

180

—

V

Drain to source breakdown

voltage

2SK216

V(BR)DSX

200

—

V

ID = 1 mA, VGS = –2 V

Gate to source breakdown voltage

V(BR)GSS

±15

—

V

IG = ±10 µA, VDS = 0

Gate to source voltage

VGS(on)

0.2

—

1.5

V

ID = 10 mA, VDS = 10 V *

2

Drain to source saturation voltage

VDS(sat)

—

2.0

V

ID = 10 mA, VGD = 0 *

2

Forward transfer admittance

|yfs|

20

40

—

mS

ID = 10 mA, VDS = 20 V *

2

Input capacitance

Ciss

—

90

—

pF

Reverse transfer capacitance

Crss

—

2.2

—

pF

ID = 10 mA, VDS = 10 V,

f = 1 MHz

Note:

2. Pulse test

类似零件编号 - 2SK215

制造商	部件名	数据表	功能描述
Hitachi Semiconductor	2SK215	33Kb / 6P	Silicon N-Channel MOS FET
Toshiba Semiconductor	2SK2150	486Kb / 5P	SILICON N CHANNEL MOS TYPE
Inchange Semiconductor ...	2SK2150	70Kb / 2P	Fast Switching Speed
Sanyo Semicon Device	2SK2151	84Kb / 3P	Very High-Speed Switching Applications
Sanyo Semicon Device	2SK2152	82Kb / 3P	Very High-Speed Switching Applications

More results

类似说明 - 2SK215

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Hitachi Semiconductor	2SK1157	49Kb / 9P	Silicon N-Channel MOS FET
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Panasonic Semiconductor	2SK615	35Kb / 2P	Silicon N-Channel MOS FET