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2SJ552L-E 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SJ552L-E 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 9 page 2SJ552(L), 2SJ552(S) Rev.4.00 Sep 07, 2005 page 3 of 8 Main Characteristics Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Typical Output Characteristics Gate to Source Voltage VGS (V) Typical Transfer Characteristics –50 0 –10 –20 –30 –40 0–2 –4 –6 –8 –10 –50 0 –10 –20 –30 –40 0 –1–2–3–4–5 Tc = 75°C 80 0 20 40 60 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –5 V –6 V –8 V –4 V –4.5 V –3.5 V –3 V VGS = –2.5 V Pulse Test Drain to Source Voltage VDS (V) Maximum Safe Operation Area –100 –300 –10 –30 –0.3 –1 –3 –0.1 –0.1 –0.3 –1 –3 –10 –30 –100 –1000 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 25°C) 1 ms 10 µs 100 µs Operation in this area is limited by RDS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2.0 0 –0.4 –0.8 –1.2 –1.6 0 –4 –8 –12 –16 –20 Pulse Test ID = –20 A –5 A –10 A –2 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 0.2 0.1 0.02 0.05 0.01 –2 –20 –50 –1 –10 –5 –100 1 0.5 VGS = –4 V –10 V Pulse Test –25°C 25°C |
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