2SJ546-E datasheet(2/8 Pages) RENESAS

部件名	2SJ546-E

功能描述	Silicon P Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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2 / 8 page

2SJ546

Rev.3.00 Sep 07, 2005 page 2 of 7

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–60

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

–15

A

Drain peak current

ID (pulse)

Note 1

–60

A

Body to drain diode reverse drain current

IDR

–15

A

Avalanche current

IAP

Note 3

–15

A

Avalanche energy

EAR

Note 3

19

mJ

Channel dissipation

Pch

Note 2

30

W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

3. Value at Tch = 25

°C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–60

—

V

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

V

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–10

µA

VDS = –60 V, VGS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

–1.0

—

–2.0

V

ID = –1 mA, VDS = –10 V

RDS (on)

—

0.075

0.095

Ω

ID = –8 A, VGS = –10 V

Note 4

Static drain to source on state resistance

RDS (on)

—

0.105

0.155

Ω

ID = –8 A, VGS = –4 V

Note 4

Forward transfer admittance

|yfs|

6.5

11

—

S

ID = –8 A, VDS = –10 V

Note 4

Input capacitance

Ciss

—

850

—

pF

Output capacitance

Coss

—

420

—

pF

Reverse transfer capacitance

Crss

—

110

—

pF

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

12

—

ns

Rise time

tr

—

75

—

ns

Turn-off delay time

td (off)

—

125

—

ns

Fall time

tf

—

75

—

ns

VGS = –10 V

ID = –8 A

RL = 3.75

Ω

Body to drain diode forward voltage

VDF

—

–1.1

—

V

IF = –15 A, VGS = 0

Body to drain diode reverse recovery time

trr

—

70

—

ns

IF = –15 A, VGS = 0

diF/dt = 50 A/

µs

Note:

4. Pulse test

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