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STB16NF06L 数据表(PDF) 3 Page - STMicroelectronics |
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STB16NF06L 数据表(HTML) 3 Page - STMicroelectronics |
3 / 13 page STB16NF06L Electrical ratings 3/13 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VDGR Drain-gate voltage (RGS = 20 kΩ)60 V VGS Gate- source voltage ± 16 V ID Drain current (continuous) at TC = 25°C 16 A ID Drain current (continuous) at TC = 100°C 11 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 64 A Ptot Total dissipation at TC = 25°C 45 W Derating Factor 0.3 W/°C dv/dt(2) 2. ISD ≤16A, di/dt ≤210A/µs, VDD =V(BR)DSS, Tj ≤TJMAX Peak diode recovery avalanche energy 23 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 8A, VDD = 30V Single pulse avalanche energy 127 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Rthj-case Thermal resistance junction-case max 3.33 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W TJ Maximum lead temperature for soldering purpose 300 °C |
类似零件编号 - STB16NF06L_06 |
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类似说明 - STB16NF06L_06 |
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