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STP10NK60Z 数据表(PDF) 5 Page - STMicroelectronics |
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STP10NK60Z 数据表(HTML) 5 Page - STMicroelectronics |
5 / 19 page STB10NK60Z - STB10NK60Z-1 - STP10NK60Z/FP - STW10NK60Z Electrical characteristics 5/19 2 Electrical characteristics (Tcase =25°C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250µA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating, Tj=125°C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±15V, VDS = 0 ± 10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =15V, ID = 4.5A 7.8 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25V, f=1 MHz, VGS=0 1370 156 37 pF pF pF Coss eq (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Equivalent ouput capacitance VGS=0, VDS =0V to 480V 90 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480V, ID = 8A VGS =10V (see Figure 19) 50 10 25 70 nC nC nC |
类似零件编号 - STP10NK60Z |
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类似说明 - STP10NK60Z |
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