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MPC17511AEV 数据表(PDF) 7 Page - Freescale Semiconductor, Inc |
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MPC17511AEV 数据表(HTML) 7 Page - Freescale Semiconductor, Inc |
7 / 17 page Analog Integrated Circuit Device Data Freescale Semiconductor 7 17511A ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 5. Dynamic Electrical Characteristics Characteristics noted under conditions TA = 25°C, VM = VDD = 5.0V, GND = 0V unless otherwise noted. Typical values noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit INPUT (EN, IN1, IN2, GIN) Pulse Input Frequency fIN – – 200 kHz Input Pulse Rise Time (13) tR – – 1.0 (14) μs Input Pulse Fall Time (15) tF – – 1.0 (14) μs OUTPUT Propagation Delay Time Turn-ON Time Turn-OFF Time tPLH tPHL – – 0.55 0.55 1.0 1.0 μs GOUT Propagation Delay Time Turn-ON Time Turn-OFF Time tSON tSOFF – – 0.15 0.15 0.5 0.5 μs Charge Pump Circuit (16) Rise Time (17) tVCRESON –0.1 3.0 ms Low-Voltage Detection Time t VDDDET –– 10 ms Notes 13. Time is defined between 10% and 90%. 14. That is, the input waveform slope must be steeper than this. 15. Time is defined between 90% and 10%. 16. When C1 = C2 = C3 = 0.1 μF. 17. Time to charge CRES to 11V after application of VDD. |
类似零件编号 - MPC17511AEV |
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类似说明 - MPC17511AEV |
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