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MCZ33887EK 数据表(PDF) 10 Page - Freescale Semiconductor, Inc |
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MCZ33887EK 数据表(HTML) 10 Page - Freescale Semiconductor, Inc |
10 / 37 page Analog Integrated Circuit Device Data 10 Freescale Semiconductor 33887 ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS POWER OUTPUTS (OUT1, OUT2) Output ON-Resistance (18) 5.0 V ≤ V+ ≤ 28 V, TJ = 25°C 8.0 V ≤ V+ ≤ 28 V, TJ = 150°C 5.0 V ≤ V+ ≤ 8.0 V, TJ = 150°C RDS(ON) – – – 120 – – – 225 300 m Ω Active Current Limiting Threshold (via Internal Constant OFF-Time PWM) on Low-Side MOSFETs (19) ILIM 5.2 6.5 7.8 A High-Side Short Circuit Detection Threshold ISCH 11 – – A Low-Side Short Circuit Detection Threshold ISCL 8.0 – – A Leakage Current (20) VOUT = V+ VOUT = Ground IOUT(LEAK) – – 100 30 200 60 μA Output MOSFET Body Diode Forward Voltage Drop IOUT = 3.0 A VF – – 2.0 V Overtemperature Shutdown Thermal Limit Hysteresis TLIM THYS 175 10 – – 225 30 °C HIGH-SIDE CURRENT SENSE FEEDBACK Feedback Current IOUT = 0 mA IOUT = 500 mA IOUT = 1.5 A IOUT = 3.0 A IOUT = 6.0 A IFB – 1.07 3.6 7.2 14.4 – 1.33 4.0 8.0 16 600 1.68 4.62 9.24 18.48 μA mA mA mA mA FAULT STATUS (21) Fault Status Leakage Current (22) VFS = 5.0 V IFS(LEAK) – – 10 μA Fault Status SET Voltage (23) IFS = 300 μA VFS(LOW) – – 1.0 V Notes 18 Output-ON resistance as measured from output to V+ and ground. 19 Active current limitation applies only for the low-side MOSFETs. 20 Outputs switched OFF with D1 or D2. 21 Fault Status output is an open Drain output requiring a pull-up resistor to 5.0 V. 22 Fault Status Leakage Current is measured with Fault Status HIGH and not SET. 23 Fault Status Set Voltage is measured with Fault Status LOW and SET with IFS = 300 μA. Table 4. STATIC ELECTRICAL CHARACTERISTICS Characteristics noted under conditions 5.0 V ≤ V+ ≤ 28 V and -40 °C ≤ TA ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit POWER SUPPLY |
类似零件编号 - MCZ33887EK |
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