数据搜索系统,热门电子元器件搜索 |
|
FDS6990AS 数据表(PDF) 5 Page - Fairchild Semiconductor |
|
FDS6990AS 数据表(HTML) 5 Page - Fairchild Semiconductor |
5 / 8 page 5 www.fairchildsemi.com FDS6990AS Rev. A1 Typical Characteristics 0 2 4 6 8 10 0246 8 10 12 Q g, GATE CHARGE (nC) I D =7.5A V DS = 10V 15V 20V 0 300 600 900 1200 1500 05 10 15 20 25 30 V DS, DRAIN TO SOURCE VOLTAGE (V) C iss C rss C oss f = 1MHz V GS = 0V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100s 100µs R DS(ON) LIMIT V GS = 10V SINGLE PULSE R JA = 135 oC/W T A = 25 oC 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1, TIME (sec) SINGLE PULSE R JA = 135°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. θ θ RθJA(t) = r(t) * RθJA RθJA = 135 °C/W TJ – TA = P * RθJA(t) Duty Cycle, D = t 1 / t2 P(pk) t1 t2 |
类似零件编号 - FDS6990AS |
|
类似说明 - FDS6990AS |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |