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FQA36P15 数据表(PDF) 1 Page - Fairchild Semiconductor |
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FQA36P15 数据表(HTML) 1 Page - Fairchild Semiconductor |
1 / 9 page ©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQA36P15 / FQA36P15_F109 Rev. B1 August 2007 QFET ® FQA36P15 / FQA36P15_F109 150V P-Channel MOSFET Features • -36A, -150V, RDS(on) = 0.09Ω @VGS = -10 V • Low gate charge ( typical 81 nC) • Low Crss ( typical 110pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • 175 °C maximum junction temperature rating Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. Absolute Maximum Ratings Thermal Characteristics GS D TO-3P FQA Series D G S Symbol Parameter FQA36P15 Units VDSS Drain-Source Voltage -150 V ID Drain Current - Continuous (TC = 25°C) -36 A - Continuous (TC = 100°C) -25.5 A IDM Drain Current - Pulsed (Note 1) -144 A VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 1400 mJ IAR Avalanche Current (Note 1) -36 A EAR Repetitive Avalanche Energy (Note 1) 29.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) -5.0 V/ns PD Power Dissipation (TC = 25°C) 294 W - Derate above 25°C 1.96 W/°C TJ, TSTG Operating and Storage Temperature Range -55 to +175 °C TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds 300 °C Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.51 °C/W RθCS Thermal Resistance, Case-to-Sink 0.24 -- °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W |
类似零件编号 - FQA36P15 |
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类似说明 - FQA36P15 |
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