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FAN5078D3 数据表(PDF) 3 Page - Fairchild Semiconductor |
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FAN5078D3 数据表(HTML) 3 Page - Fairchild Semiconductor |
3 / 18 page © 2008 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FAN5078D3 • Rev. 1.0.0 Table 1. BOM for Figure 1 Ref. Qty Description Mfg. and Part Number Q1 1 NFET, VDS=25V, DPAK VGS=10V, ID=35A, RDS(ON)=6.5mΩ (Typ) VGS=4.5V, ID=35A, RDS(ON)=9.1mΩ (Typ) Fairchild Semiconductor FDD8780 Q2 1 NFET, VDS=25V, DPAK VGS=10V, ID=35A, RDS(ON)=6.5mΩ (Typ) VGS=4.5V, ID=35A, RDS(ON)=9.1mΩ (Typ) Fairchild Semiconductor FDD8780 Q3 1 NFET, VDS=30V, DPAK VGS=10V, ID=35A, RDS(ON)=7mΩ (Typ) VGS=4.5V, ID=35A, RDS(ON)=9mΩ (Typ) Fairchild Semiconductor FDD8880 Q4, Q6 2 PFET, 20V, 5.5A, 30m Ω, SSOT6 Fairchild Semiconductor FDC602P Q5 1 NFET, 20V, 6.2A, 20m Ω, SSOT6 Fairchild Semiconductor FDC637AN Q7 1 NFET, 30V, 30A, 22m Ω, DPAK Fairchild Semiconductor FDD6612A C12,C15 2 330µf, 10V, 20%, 110m Ω C13 1 10nf, 50V, 10%, X7R C14 1 3.3nf, 50V, 10%, X7R C2 1 4.7µf, 25V, 20%, X5R C4, C8 2 1.0µf, 10V, 10%, X5R C3, C5 2 0.1µf, 16V, 10%, X7R C6 1 4.7nf, 50V, 10%, X7R C7 1 820µf, 6.3V, 20%, 36mΩ C9 1 82pf, 50V, 5%, NPO CIN 4 1200µf, 6.3V, 20%, 18mΩ COUT 3 1200µf, 6.3V, 20%, 18mΩ L1 1 IND, 1.8µH, 16A, 3.2m Ω Inter-Technical SC5018-1R8M L2 1 IND, 470nH, 16A, 2.6m Ω Inter-Technical SC2511-R47M R1,R2,R3,R9,R10 5 1.21K, 1% R4 1 3.9K, 5% R5 1 71.5K, 1% R6 1 15.0K, 1% Contact a Fairchild Semiconductor representative for complete reference design and / or evaluation board. Bypass Capacitor Notes: 1. Input capacitor CIN is typically chosen based on the ripple current requirements. COUT is typically selected based on both current ripple rating and ESR requirement (see AN-6006 for these calculations). 2. C7, C12, and C15 selection is largely determined by ESR and load transient response requirements. In each case, the number of capacitors required depends on the capacitor technology chosen. Oscons can meet the requirements with less space, but higher cost, than low-ESR electrolytics. |
类似零件编号 - FAN5078D3 |
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类似说明 - FAN5078D3 |
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