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STP9NC60FP 数据表(PDF) 3 Page - STMicroelectronics |
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STP9NC60FP 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Cond iti ons Mi n. Typ . Max. Un it td(on) tr Turn-on Delay T ime Rise Time VDD =300 V ID =4.5 A RG =4.7 Ω VGS =10 V (Resistive Load, see fig. 3) 28 15 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD =480 V ID =9.0 A VGS =10 V 44 10. 5 19. 5 62 nC nC nC SWITCHING OFF Symbo l Parameter Test Cond iti ons Mi n. Typ . Max. Un it td( off) tf Turn-off Delay Time Fall T ime VDD =300 V ID =4. 5 A RG =4.7 Ω VGS =10 V (Resistive Load, see fig. 3) 53 30 ns ns tr(Voff) tf tc Off-volt age Rise Time Fall T ime Cross-over Time VDD =480 V ID =9. 0 A RG =4.7 Ω VGS =10 V (I nduct ive Load, see fig. 5) 15 12 24 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Cond iti ons Mi n. Typ . Max. Un it ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 9.0 36 A A VSD ( ∗)Forward On Voltage ISD =9 A VGS =0 1.6 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD =9 A di/dt =100 A/ µs VDD =100 V Tj = 150 oC (see test circuit , fig. 5) 610 5.4 17 ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area Safe Operating Area for TO-220 Safe Operating Area for TO-220FP STP9NC60/FP 3/9 |
类似零件编号 - STP9NC60FP |
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类似说明 - STP9NC60FP |
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