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STB8NC50 数据表(PDF) 3 Page - STMicroelectronics |
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STB8NC50 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STP8NC50/FP/STB8NC50-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 250 V, ID = 4 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 19 ns tr Rise Time 14 ns Qg Total Gate Charge VDD = 400V, ID = 8 A, VGS = 10V 36 46 nC Qgs Gate-Source Charge 5 nC Qgd Gate-Drain Charge 18.2 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 400V, ID = 8 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 13 ns tf Fall Time 15 ns tc Cross-over Time 26 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 8 A ISDM (2) Source-drain Current (pulsed) 32 A VSD (1) Forward On Voltage ISD = 8 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD =8 A, di/dt = 100A/µs VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 470 ns Qrr Reverse Recovery Charge 3.2 µC IRRM Reverse Recovery Current 13.7 A Safe Operating Area for TO-220/I2PAK Safe Operating Area for TO-220FP |
类似零件编号 - STB8NC50 |
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类似说明 - STB8NC50 |
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