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STP80PF55 数据表(PDF) 1 Page - STMicroelectronics

部件名 STP80PF55
功能描述  P-CHANNEL 55V - 0.016 ohm - 80A TO-220 STripFET??II POWER MOSFET
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80PF55 数据表(HTML) 1 Page - STMicroelectronics

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PRELIMINARY DATA
February 2002
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP80PF55
P-CHANNEL 55V - 0.016
Ω - 80A TO-220
STripFET™ II POWER MOSFET
s
TYPICAL RDS(on) = 0.016 Ω
s
EXCEPTIONAL dv/dt CAPABILITY
s
100% AVALANCHE TESTED
s
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based
process.
The
resulting
transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
TYPE
VDSS
RDS(on)
ID
STB80PF55
55 V
< 0.018
80 A
1
2
3
TO-220
ABSOLUTE MAXIMUM RATINGS
(
•) Pulse width limited by safe operating area
(*) Current Limited by Package
Note: For the P-CHANNEL MOSFET actual polarity of voltages and
current has to be reversed
(1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(2) Starting Tj = 25 oC, ID = 80A, VDD = 40V
Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
55
V
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
55
V
VGS
Gate- source Voltage
± 16
V
ID(*)
Drain Current (continuos) at TC = 25°C
80
A
ID
Drain Current (continuos) at TC = 100°C
57
A
IDM(•)
Drain Current (pulsed)
320
A
Ptot
Total Dissipation at TC = 25°C
300
W
Derating Factor
2
W/°C
dv/dt (1)
Peak Diode Recovery voltage slope
7
V/ns
EAS (2)
Single Pulse Avalanche Energy
1.4
mJ
Tstg
Storage Temperature
-55 to 175
°C
Tj
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM


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