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STP80PF55 数据表(PDF) 1 Page - STMicroelectronics |
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STP80PF55 数据表(HTML) 1 Page - STMicroelectronics |
1 / 6 page 1/6 PRELIMINARY DATA February 2002 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. STP80PF55 P-CHANNEL 55V - 0.016 Ω - 80A TO-220 STripFET™ II POWER MOSFET s TYPICAL RDS(on) = 0.016 Ω s EXCEPTIONAL dv/dt CAPABILITY s 100% AVALANCHE TESTED s APPLICATION ORIENTED CHARACTERIZATION DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturing reproducibility. APPLICATIONS s MOTOR CONTROL s DC-DC & DC-AC CONVERTERS TYPE VDSS RDS(on) ID STB80PF55 55 V < 0.018 Ω 80 A 1 2 3 TO-220 ABSOLUTE MAXIMUM RATINGS ( •) Pulse width limited by safe operating area (*) Current Limited by Package Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed (1) ISD ≤ 40A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. (2) Starting Tj = 25 oC, ID = 80A, VDD = 40V Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 55 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 55 V VGS Gate- source Voltage ± 16 V ID(*) Drain Current (continuos) at TC = 25°C 80 A ID Drain Current (continuos) at TC = 100°C 57 A IDM(•) Drain Current (pulsed) 320 A Ptot Total Dissipation at TC = 25°C 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns EAS (2) Single Pulse Avalanche Energy 1.4 mJ Tstg Storage Temperature -55 to 175 °C Tj Max. Operating Junction Temperature INTERNAL SCHEMATIC DIAGRAM |
类似零件编号 - STP80PF55 |
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类似说明 - STP80PF55 |
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