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FDS8984 数据表(PDF) 2 Page - Fairchild Semiconductor |
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FDS8984 数据表(HTML) 2 Page - Fairchild Semiconductor |
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2 / 6 page  FDS8984 Rev. A1 www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics (Note 3) Dynamic Characteristics Switching Characteristics (Note 3) Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250µA, referenced to 25°C 23 mV/°C IDSS Zero Gate Voltage Drain Current VDS = 24V VGS = 0V 1 µA TJ = 125°C 250 IGSS Gate to Source Leakage Current VGS = ±20V,VDS = 0V ±100 nA VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 1.2 1.7 2.5 V ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C - 4.3 mV/°C rDS(on) Drain to Source On Resistance VGS = 10V, ID = 7A 19 23 m Ω VGS = 4.5V, ID = 6A 24 30 VGS = 10V, ID = 7A, TJ = 125°C 26 32 Ciss Input Capacitance VDS = 15V, VGS = 0V, f = 1.0MHz 475 635 pF Coss Output Capacitance 100 135 pF Crss Reverse Transfer Capacitance 65 100 pF RG Gate Resistance f = 1MHz 0.9 1.6 Ω td(on) Turn-On Delay Time VDD = 15V, ID = 7A VGS = 10V, RGS = 33Ω 510 ns tr Rise Time 918 ns td(off) Turn-Off Delay Time 42 68 ns tf Fall Time 21 34 ns Qg Total Gate Charge VDS = 15V, VGS = 10V, ID = 7A 9.2 13 nC Qg Total Gate Charge VDS = 15V, VGS = 5V, ID = 7A 5.0 7 nC Qgs Gate to Source Gate Charge 1.5 nC Qgd Gate to Drain “Miller” Charge 2.0 nC VSD Source to Drain Diode Voltage ISD = 7A 0.9 1.25 V ISD = 2.1A 0.8 1.0 V trr Diode Reverse Recovery Time IF = 7A, di/dt = 100A/µs 33 ns Qrr Diode Reverse Recovery Charge 20 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. Scale 1 : 1 on letter size paper 2: Starting TJ = 25°C, L = 1mH, IAS = 8A, VDD = 27V, VGS = 10V. 3: Pulse Test:Pulse Width <300 µs, Duty Cycle <2%. c) 135°C/W when mounted on a minimun pad b) 125°C/W when mounted on a 0.02 in2 pad of oz copper a) 78°C/W when mounted on a 0.5in2 pad of 2 oz copper |
类似零件编号 - FDS8984_07 |
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类似说明 - FDS8984_07 |
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