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STP80N03L-06 数据表(PDF) 3 Page - STMicroelectronics |
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STP80N03L-06 数据表(HTML) 3 Page - STMicroelectronics |
3 / 5 page ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Time Rise Time VDD = V ID = A RG = Ω VGS = V (see test circuit, figure 3) ns ns (di/dt)on Turn-on Current Slope VDD = V ID = A RG = Ω VGS = V (see test circuit, figure 5) A/ µs Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = V ID = A VGS = V nC nC nC SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) tf tc Off-voltage Rise Time Fall Time Cross-over Time VDD = V ID = A RG = Ω VGS = V (see test circuit, figure 5) ns ns ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM( •) Source-drain Current Source-drain Current (pulsed) 80 320 A A VSD ( ∗) Forward On Voltage ISD = A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = A di/dt = A/ µs VDD = V Tj = oC (see test circuit, figure 5) ns µC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operating area (1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX STP80N03L-06 3/5 |
类似零件编号 - STP80N03L-06 |
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类似说明 - STP80N03L-06 |
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