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STP7NB40 数据表(PDF) 1 Page - STMicroelectronics |
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STP7NB40 数据表(HTML) 1 Page - STMicroelectronics |
1 / 4 page STP7NB40 STP7NB40FP N - CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.75 Ω s EXTREMELY HIGH dV/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP7NB40 STP7NB40FP VDS Drain-source Voltage (VGS = 0) 400 V VDGR Drain- gate Voltage (RGS = 20 k Ω) 400 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 o C 7 4.4 A ID Drain Current (continuous) at Tc = 100 oC 4.4 2.8 A IDM( •) Drain Current (pulsed) 28 28 A Ptot Total Dissipation at Tc = 25 oC100 35 W Derating Factor 0.8 0.28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 4.5 4.5 V/ns VISO Insulation Withstand Voltage (DC) 2000 V Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1) ISD ≤ 7A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 1998 1 2 3 TO-220 TO-220FP 1 2 3 TYPE VDSS RDS(on) ID STP7NB40 STP7NB40FP 400 V 400 V < 0.9 Ω < 0.9 Ω 7.0 A 4.4 A 1/4 |
类似零件编号 - STP7NB40 |
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类似说明 - STP7NB40 |
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