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STB4NC60-1 数据表(PDF) 3 Page - STMicroelectronics |
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STB4NC60-1 数据表(HTML) 3 Page - STMicroelectronics |
3 / 10 page 3/10 STP4NC60/FP/STB4NC60-1 ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD =300V, ID =2A RG = 4.7Ω VGS =10V (see test circuit, Figure 3) 14 ns tr Rise Time 14 ns Qg Total Gate Charge VDD =480V, ID = 4A, VGS =10V 16.5 23.1 nC Qgs Gate-Source Charge 2.5 nC Qgd Gate-Drain Charge 9 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 480V, ID =4A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 15 ns tf Fall Time 19 ns tc Cross-over Time 24 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 4.2 A ISDM (2) Source-drain Current (pulsed) 16.8 A VSD (1) Forward On Voltage ISD = 4.2A, VGS =0 1.6 V trr Reverse Recovery Time ISD = 4A, di/dt = 100A/µs, VDD =100V, Tj =150°C (see test circuit, Figure 5) 600 ns Qrr Reverse Recovery Charge 2.7 µC IRRM Reverse Recovery Current 9 A Safe Operating Area for TO-220FP Safe Operating Area for TO-220 / I2PAK |
类似零件编号 - STB4NC60-1 |
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类似说明 - STB4NC60-1 |
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