Electrical specifications

STA333ML

6/14

3.4

Electrical characteristics

Table 6.

Electrical characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

Po

Output power BTL

THD = 1%

16

W

THD = 10%

20

Power Pchannel/Nchannel

MOSFET (total bridge)

ld = 1 A

180

250

m

Ω

Power Pchannel/Nchannel

leakage

10

µA

gP

Power Pchannel RdsON matching

ld = 1 A

95

%

gN

Power Nchannel RdsON matching ld = 1 A

95

%

Low current dead time (static)

Resistive load, see Figure 3

510

ns

High current dead time (dynamic)

10

20

ns

Rise time

Resistive load, seeFigure 3

810

ns

Fall time

Resistive load, see Figure 3

810

ns

Supply voltage (VCC1, VCC2)

4.5

18

V

down mode

PWRDN = 0

0.1

mA

operation

PCM input signal = -60 dBFS.

Switching frequency = 384 kHz

No LC filters

30

mA

Supply current DDX processing

(reference only)

Internal clock = 49.152 MHz

80

mA

Overcurrent limit

Nonlinear output

2.2

3.5

4.3

A

Short circuit protection

Hi-Z output

2.7

3.8

5.0

A

UVL

Under voltage protection threshold

3.5

4.3

V

tmin

Output minimum pulse width

No load

20

30

60

ns

DR

Dynamic range

100

dB

SNR

Signal to noise ratio

A-weighted

94

dB

THD+N

Total harmonic distortion and noise Po = 1 W, f = 1 kHz

0.05

0.2

%

PSRR

Power supply rejection ratio

DDX stereo, < 5 kHz

Vripple = 1 V RMS

Audio input = dither only

80

dB

Crosstalk

DDX stereo, < 5 kHz

One channel driven at 1 W

other channel measured

80

dB

η

Peak efficiency, DDX mode

Po = 2 x 20 W,

8

Ω

90

%