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LFE26E-6F672C 数据表(PDF) 55 Page - Lattice Semiconductor |
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LFE26E-6F672C 数据表(HTML) 55 Page - Lattice Semiconductor |
55 / 386 page 3-3 DC and Switching Characteristics Lattice Semiconductor LatticeECP2/M Family Data Sheet DC Electrical Characteristics Over Recommended Operating Conditions Symbol Parameter Condition Min. Typ. Max. Units IIL, IIH 1 Input or I/O Low Leakage 0 ≤ VIN ≤ (VCCIO - 0.2V) — — 10 µA IIH 1 Input or I/O High Leakage (VCCIO - 0.2V) < VIN ≤ 3.6V — — 150 µA IPU I/O Active Pull-up Current 0 ≤ VIN ≤ 0.7 VCCIO -30 — -210 µA IPD I/O Active Pull-down Current VIL (MAX) ≤ VIN ≤ VIH (MAX) 30 — 210 µA IBHLS Bus Hold Low Sustaining Current VIN = VIL (MAX) 30 — — µA IBHHS Bus Hold High Sustaining Current VIN = 0.7 VCCIO -30 — — µA IBHLO Bus Hold Low Overdrive Current 0 ≤ VIN ≤ VCCIO — — 210 µA IBHHO Bus Hold High Overdrive Current 0 ≤ VIN ≤ VCCIO — — -210 µA VBHT Bus Hold Trip Points 0 ≤ VIN ≤ VIH (MAX) VIL (MAX) — VIH (MIN) V C1 I/O Capacitance 2 VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V, VCC = 1.2V, VIO = 0 to VIH (MAX) —8 — pf C2 Dedicated Input Capacitance 2 VCCIO = 3.3V, 2.5V, 1.8V, 1.5V, 1.2V, VCC = 1.2V, VIO = 0 to VIH (MAX) —6 — pf 1. Input or I/O leakage current is measured with the pin configured as an input or as an I/O with the output driver tri-stated. It is not measured with the output driver active. Bus maintenance circuits are disabled. 2. TA 25 oC, f = 1.0MHz. |
类似零件编号 - LFE26E-6F672C |
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类似说明 - LFE26E-6F672C |
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