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SMP100LC-160 数据表(PDF) 4 Page - STMicroelectronics |
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SMP100LC-160 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Characteristics SMP100LC 4/12 Figure 1. Pulse waveform Figure 2. Non repetitive surge peak on-state current versus overload duration 100 50 %IPP tr tp 0 t Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) I (A) TSM 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 70 F=50Hz T initial = 25°C j t(s) Figure 3. On-state voltage versus on-state current (typical values) Figure 4. Relative variation of holding current versus junction temperature 10 100 01 2345 678 V (V) T I (A) T T initial = 25°C j I [T ] / I [T =25°C] HH jj -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 T (°C) j Figure 5. Relative variation of breakover voltage versus junction temperature Figure 6. Relative variation of leakage current versus junction temperature (typical values) -25 0 25 50 75 100 125 0.96 0.98 1.00 1.02 1.04 1.06 1.08 V [ ] / V [ =25°C] BO BO TT jj T (°C) j I [ ] / I [ =25°C] RR TT jj 25 50 75 100 125 1 10 100 1000 2000 T (°C) j |
类似零件编号 - SMP100LC-160 |
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类似说明 - SMP100LC-160 |
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