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SMA6F13A 数据表(PDF) 2 Page - STMicroelectronics |
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SMA6F13A 数据表(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics SMA6F 2/9 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit PPP Peak pulse power dissipation (1) Tj initial = Tamb 600 W P Power dissipation on infinite heatsink Tlead = 55 °C 6 W IFSM Non repetitive surge peak forward current for unidirectional types tp = 10 ms Tj initial = Tamb 60 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s 260 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistance Symbol Parameter Value Unit Rth (j-l) Junction to leads 20 °C/W Table 3. Electrical characteristics - definitions (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance V CLVBR VRM I RM I R I PP V I I F V F V CLVBR VRM I RM I R I PP V I I F V F |
类似零件编号 - SMA6F13A |
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类似说明 - SMA6F13A |
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