STP33N10 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STP33N10

功能描述	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

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STP33N10

STP33N10FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

s

TYPICAL RDS(on) = 0.045

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

REGULATORS

s

DC-DC & DC-AC CONVERTERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

INTERNAL SCHEMATIC DIAGRAM

TYPE

VDSS

R DS(on)

ID

STP33N10

STP33N10FI

100 V

<0. 06

Ω

<0. 06

Ω

33 A

18 A

1

2

3

TO-220

ISOWATT220

July 1993

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Unit

STP33N10

STP33N10FI

VDS

Drain-source Voltage (VGS =0)

100

V

VDG R

Drain- gate Voltage (RGS =20 k

Ω)100

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (cont inuous) at T c =25

oC33

18

A

ID

Drain Current (cont inuous) at T c =100

oC23

12

A

IDM(

•)

Drain Current (pulsed)

132

A

Ptot

Total Dissipation at Tc =25

oC

150

45

W

Derating Factor

1

0.3

W/

oC

VISO

I nsulat ion Withstand Voltage (DC)



2000

V

Tstg

St orage Temperat ure

-65 to 175

oC

Tj

Max. Operat ing Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

1/10

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