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STCS05ADR 数据表(PDF) 6 Page - STMicroelectronics |
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STCS05ADR 数据表(HTML) 6 Page - STMicroelectronics |
6 / 18 page Electrical characteristics STCS05A 6/18 4 Electrical characteristics Note: All devices 100 % production tested at TA = 25 °C. Limits over the operating temperature range are guaranteed by design. Table 5. Electrical characteristics (VCC = 12 V; IO = 100 mA; TJ = -40 °C to 125 °C; VDRAIN = 1 V; CDRAIN = 1 µF; CBYP = 100 nF typical values are at TA = 25 °C, unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit VCC Supply voltage range 4.5 40 V Output current range 1 500 mA IO Output current RFB = 0.2 Ω 500 mA Regulation (percentage with respect to VCC = 12 V) VCC = 4.5 to 40V, IO = 100mA; VDRAIN = 1V -1 +1 % VFB Feedback Voltage IO = 0 to 0.5A 90 100 110 mV ICC Quiescent current (Measured on VCC pin) On Mode 450 750 µA Shutdown Mode; VCC = 5 to 12V 1 Shutdown Mode; VCC = 12 to 40V 3 VDROP Dropout voltage (VDRAIN to GND) IO = 100mA 0.12 0.16 V IO = 0.5A 0.58 0.9 LEAKDRAIN Drain leakage current Shutdown; VDRAIN = 40V 10 µA TR/TF Rise/Fall time of the current on PWM transition CSLOPE = 10 nF, TJ = -40 °C to 105 °C 800 µs TD Delay on PWM signal (see Figure 3) VPWM rising, VCC = 12V CSLOPE = floating, 3 µs VPWM falling, VCC = 12V CSLOPE = floating 1.2 DISC Low level voltage ISINK = 5mA 0.2 0.5 V Leakage current VDISC = 5V 1 µA Load disconnection threshold (VDRAIN-GND) DISC Turn-ON 75 mV DISC Turn-OFF 110 Thermal Protection Shutdown temperature 155 °C Hysteresis 25 Logic inputs (PWM and EN) VL Input low level 0.4 V VH Input high level 1.2 V EN, PWM leakage current VEN = 5V; VPWM = 5V 2 µA EN input leakage current VEN = 40V 60 PWM input leakage current VPWM = 40V 120 |
类似零件编号 - STCS05ADR |
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类似说明 - STCS05ADR |
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